p age:p2-p1 plastic-encapsulate diodes schottky barrier diode feature s low turn-on voltage. fast switching. ultra-small surface mount package. pn junction guard ring for transient and esd protection. marking l9 maximum rating @ ta=25 unless otherwise specified parameter symbol limits unit peak repetitive reverse voltage working peak reverse voltage dc reverse voltage v rrm v rwm v r 30 v rms reverse voltage v r(rms) 21 v average rectified output current i o 100 ma forward continuous current i f 200 ma repetitive peak forward current i frm 300 ma forward surge current @t<1.0s i fsm 600 ma power dissipation p d 200 mw thermal resistance,junction to ambient air r ja 625 /w junction temperature t j 125 storage temperature range t stg -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol conditions min. typ. max. unit reverse breakdown voltage v (br)r i r =100a 30 v forward voltage v f1 i f =0.1ma 240 mv v f2 i f =1.0ma 320 mv v f3 i f =10ma 400 mv v f4 i f =30ma 500 mv v f5 i f =100ma 1000 mv reverse leakage current i r v r =25v 2.0 a reverse recovery time t rr i f =10ma,i r =10ma to 1ma r l =100? 5.0 ns junction capacitance c j v r =1.0v,f=1.0mhz 10 pf sod-323 - + BAT54WS mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p2-p2 plastic-encapsulate diodes typical characteristics BAT54WS mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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